"Key progress," says CXMT, racing Samsung and SK Hynix on the same cell
China's largest DRAM maker is pursuing a cell layout that Samsung and SK Hynix are also developing. Its promised launch would put a concrete test in front of Washington's effort to restrict Chinese chipmaking.
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China's largest memory chipmaker says it has advanced a denser memory-cell design and plans a server product by the end of 2026, setting an aggressive deadline against its Korean rivals.
ChangXin Memory Technologies, known as CXMT, announced the advance at an industry event in Shanghai over the weekend of October 10-11. The company is pursuing a layout called 4F square, which packs more memory cells into the same chip area than the mainstream design used today.
That could make each chip hold more data and reduce the cost of memory capacity, an important part of the economics of AI hardware. It also puts CXMT into a race with Samsung Electronics and SK Hynix over a major change in how memory chips are built.
CXMT president Cao Kanyu said the company had made "key progress", according to a company statement. CXMT plans to introduce a server-memory product using the structure before the year ends.
The technological claim has not been independently verified. CXMT has not specified whether it has produced a working die, meaning a single finished memory chip cut from a silicon wafer, what manufacturing process it would use, or whether its approach includes the transistor and material changes its rivals are pursuing. Neither Samsung nor SK Hynix has commented so far.
